Electrical properties of AgGaSe2 epitaxial layers-Reference-Cited by-同舟云学术

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Electrical properties of AgGaSe2 epitaxial layers

Published:1983 Issue:4 Volume:18 Page:477-481
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Neumann H.,Nowak E.,Schumann B.,Kühn G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference27 articles.

1. Growth and characterization of AgGaSe2 crystals

2. , , , : in: Chemical Bond in Semiconductor and Semimetal Crystals (ed. N. N. Sirota), Minsk 1973, p. 248

3. : Semiconductor Statistics, Oxford 1962

4. : in: Chemical Bond in Semiconductor and Semimetal Crystals (ed. N. N. Sirota), Minsk 1973, p. 223

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1. Research on performance improvement technology of a BaGa4Se7 mid-infrared optical parametric oscillator;Optics Letters;2020-11-24

2. Photoluminescence study of AgGaSe2, AgGa0.9In0.1Se2, and AgGa0.8In0.2Se2 crystals grown by the horizontal Bridgman technique;Journal of Applied Physics;2008-06-15

3. CVT-growth of AgGaSe2 single crystals: Electrical and photoluminescence properties;Solar Energy Materials and Solar Cells;1996-10

4. Photovoltaic performance of polycrystalline thin film p-AgGaSe2/n-Zn0.5Cd0.5S heterojunctions;Materials Science and Engineering: B;1991-05

5. Characterization of p-AgGaSe2/n-CdS thin film heterojunction;Materials Letters;1991-03

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