A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering-Reference-Cited by-同舟云学术

A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering

Published:2021-11-09 Issue:1 Volume:259 Page:2100409
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Çaydaşı Murat¹,Mintaş Mehmet Fatih¹,Chumakov Yurii M.²,Volz Sebastian³,Cengiz Asuman¹⁴,Seyidov MirHasan Yu.¹^ORCID

Affiliation:

1. Department of Physics Gebze Technical University Gebze Kocaeli 41400 Turkey

2. Laboratory of Physical Methods of Solid State Investigation Institute of Applied Problems in Physics Academiei str. 5 Chisinau MD 2028 Moldova

3. LIMMS/CNRS‐IIS (IRL2820) International Collaborative Research Center Institute of Industrial Science The University of Tokyo 4-6-1 Komaba Meguro‐ku Tokyo 153-8505 Japan

4. Department of Physics Kocaeli University Kocaeli 41380 Turkey

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100409

Reference81 articles.

1. 2D Ternary Chalcogenides

2. Enhancing the photoresponse of a TlGaSe2semiconductor for ultraviolet detection applications

3. Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications

4. Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range

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