Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD-Reference-Cited by-同舟云学术

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Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Published:2022-06-15 Issue:10 Volume:259 Page:2200137
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Kakanakova-Georgieva Anelia¹²^ORCID,Papamichail Alexis¹²,Stanishev Vallery¹²³,Darakchieva Vanya¹²³⁴

Affiliation:

1. Division of Semiconductor Materials Department of Physics Chemistry and Biology (IFM) Linköping University SE-58183 Linköping Sweden

2. Center for III-Nitride Technology C3NiT – Janzén, Linköping University SE-58183 Linköping Sweden

3. Terahertz Materials Analysis Center THeMAC Linköping University SE-58183 Linköping Sweden

4. Solid State Physics and NanoLund Lund University P. O. Box 118 221 00 Lund Sweden

Funder

Vinnova

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200137

Reference17 articles.

1. Vertical Power p-n Diodes Based on Bulk GaN

2. High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

3. The 2018 GaN power electronics roadmap

4. Progress on and challenges of p-type formation for GaN power devices

5. Hole conductivity and compensation in epitaxial GaN:Mg layers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state;Journal of Colloid and Interface Science;2024-09

2. Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation;Chemical Engineering Journal;2024-01

3. Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications;Crystals;2023-08-27

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