DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy-Reference-Cited by-同舟云学术

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DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy

Published:2022-02-18 Issue:6 Volume:259 Page:2100430
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Kusaba Akira¹^ORCID,Kurniawan Romeo Marcel¹,Kempisty Paweł¹²,Kangawa Yoshihiro¹

Affiliation:

1. Research Institute for Applied Mechanics Kyushu University Fukuoka 816-8580 Japan

2. Institute of High Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100430

Reference36 articles.

1. A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

2. A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

3. Activation energies of Si donors in GaN

4. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

5. Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

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