Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN-Reference-Cited by-同舟云学术

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

Published:2022-12-28 Issue: Volume: Page:2200545
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Markevich Vladimir P.¹^ORCID,Halsall Matthew P.¹^ORCID,Sun Lijie¹,Crowe Iain F.¹^ORCID,Peaker Anthony R.¹^ORCID,Kruszewski Piotr²^ORCID,Plesiewicz Jerzy²,Prystawko Pawel²^ORCID,Bulka Sylwester³,Jakiela Rafal⁴

Affiliation:

1. Photon Science Institute and Department of Electrical and Electronic Engineering University of Manchester Manchester M13 9PL UK

2. Institute of High Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland

3. Institute of Nuclear Chemistry and Technology Dorodna 16 03-195 Warsaw Poland

4. Institute of Physics Polish Academy of Sciences al. Lotników 32/46 02-668 Warsaw Poland

Funder

Engineering and Physical Sciences Research Council

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200545

Reference24 articles.

1. Deep traps in GaN-based structures as affecting the performance of GaN devices

2. GaN-based power devices: Physics, reliability, and perspectives

3. Computationally predicted energies and properties of defects in GaN

4. A first-principles understanding of point defects and impurities in GaN

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