On the Electric Field Dependence of the Conductivity of Holes in Si at Low Temperatures 1. The Drift Velocity under Consideration of the Non-Equipartition of Acoustic Phonon Energy-Reference-Cited by-同舟云学术

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On the Electric Field Dependence of the Conductivity of Holes in Si at Low Temperatures 1. The Drift Velocity under Consideration of the Non-Equipartition of Acoustic Phonon Energy

Published:1976-02-01 Issue:2 Volume:73 Page:607-614
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Von Borzeszkowski J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. On the Temperature Dependence of Hole Mobility in Silicon

2. Conductivity of Hot Holes in Silicon at 77 °K

3. Thesis, Humboldt-Universitat, Berlin 1970.

4. , , , and , Preprint, Charge-Carrier Drift Velocity in Si, I. Holes 1974.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-hole transport and noise phenomena in silicon at cryogenic temperatures from first principles;Physical Review B;2023-12-19

2. Full-Boltzmann-equation solutions of the acoustic-phonon-limited conductivity and Hall mobilities forp-type silicon and germanium;Physical Review B;1983-05-15

3. Deformation-potential-theory calculation of the acoustic-phonon-limited conductivity and Hall mobilities forp-type silicon;Physical Review B;1983-02-15

4. Bulk hot-electron properties of cubic semiconductors;Advances in Physics;1979-08

5. Acoustic scattering in a two-band system and its application to hole transport properties in cubic semiconductors;Journal of Physics C: Solid State Physics;1979-04-28

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