Investigation of Coexistence of Weakly Relaxed Neutral Deep Donor (D°) and DX− States in AlxGa1−xAs:Se Using ICTS under Pressure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
3. The DX Center: Evidence for Charge Capture Via an Excited Intermediate State
4. Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped AlxGa1-xAs and Microstructures
5. Farinfrared Magneto-Optics of the Shallow-Deep Impurity Transitions Using Diamond Anvil Cells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Site-specific x-ray absorption spectroscopy of electron traps by x-ray-induced displacement current measurement;Physical Review B;2002-02-04
2. Studies on Surface and Interface with X-ray Absorption Fine Structure (XAFS). Microspectroscopy of Semiconductor Surfaces by SCM-XAFS Method.;Hyomen Kagaku;2002
3. Direct observation of local structure of DX center by capacitance X-ray absorption fine structure;Physica B: Condensed Matter;1999-12
4. Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se;Applied Physics Letters;1999-05-03
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