Calculation of the Subband Structure of Inversion Layers in p-InSb Bicrystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Electric subbands in P-type germanium inversion layers
2. Shubnikov-de Haas effect of n-inversion layers in InSb grain boundaries
3. A Modified Local Density Approximation. Electron Density in Inversion Layers
4. Carrier Density near the Semiconductor-Insulator Interface. Local Density Approximation for Non-Isotropic Effective Mass
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1. Magnetotransport investigations of the quasi-two-dimensional electron system in Hg1-xCdxTe bicrystals in tilted magnetic fields;Semiconductor Science and Technology;1992-04-01
2. Calculations of Magnetotransport Properties of InSb Bicrystals with Several Populated Q2D Subbands;physica status solidi (b);1988-07-01
3. Self-Consistent Calculation of the 2D Subband Structure at Grain Boundaries: Some Shortcomings of the Semiclassical Approach;physica status solidi (b);1988-03-01
4. Magnetotransport Properties and Subband Structure of the Two-Dimensional Electron Gas in the Inversion Layer of InSb Bicrystals under Hydrostatic Pressure;physica status solidi (b);1988-01-01
5. Simple Calculation of Pressure Dependent Electronic Properties of n-Inversion Layers in InSb Bicrystals;physica status solidi (b);1986-12-01
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