Direct Determination of the Negative Energy Gap Eo for Semiconductors with Inverted Band Structure-Reference-Cited by-同舟云学术

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Direct Determination of the Negative Energy Gap Eo for Semiconductors with Inverted Band Structure

Published:1977-06-01 Issue:2 Volume:81 Page:K119-K123
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Szuszkiewicz W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Optical absorption in Hg Te

2. , , and , Proc. 10th Internat. Conf. Phys. Semicond. Cambridge, 1970, Ed. S.P. Keller, J. C. Hensel, and F. Stern (p. 536).

3. Infrared laser modulation spectroscopy

4. , and , Proc. Internat. Conf. Phys. Semimetals and Narrow Gap Semicond. Nice, 1973.

5. Ph. D. Thesis, University of Paris, 1975.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonlinear Temperature Dependence of the Band Gap in Hg1-x-yCdxMnyTe and Hg1-xCdxTe Alloys;Acta Physica Polonica A;1991-02

2. Identification of the nature of the optical transitions in Hg0.42Cd0.58Te;Infrared Physics;1991-01

3. Temperature dependence of the fundamental absorption edge of mercury cadmium telluride;Journal of Applied Physics;1990-05-15

4. Room‐temperature magnetoabsorption in HgTe/Hg0.15Cd0.85Te superlattices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-03

5. Photoluminescence of Cd-rich Hg1−xCdxTe alloys (0.7;Journal of Crystal Growth;1985-07

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