Tight‐Binding Cluster Model for C, Si, and Ge. II. Size and Shape Dependence of Some Cluster Properties

Abstract

AbstractThe analytic description of the electronic structure of the s‐states tight‐binding cluster model of C, Si, and Ge (part I) is used for the investigation of the dependence of some electronic properties of the clusters on their size and shape. Clusters in the form of cubes, plates, and rods are considered. The rate of convergence of the cluster properties to the corresponding limit values is discussed.