The EL2 Defect in GaAs: Some Recent Developments
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference161 articles.
1. Defect formation chemistry of EL2 center atEc−0.83 eV in ion‐implanted gallium arsenide
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4. Photoresponse of the AsGaantisite defect in as‐grown GaAs
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