Enhanced Negative Photoconductivity in InAs Nanowire Phototransistors Surface-Modified with Molecular Monolayers-Reference-Cited by-同舟云学术

Enhanced Negative Photoconductivity in InAs Nanowire Phototransistors Surface-Modified with Molecular Monolayers

Author:

Shen Lifan¹²,Yip SenPo²³⁴⁵,Lan Changyong²³⁴,Shu Lei³⁴⁵,Li Dapan³⁴⁵,Zhou Ziyao²³⁴⁵,Wong Chun-Yuen²⁵⁶,Pun Edwin Y. B.¹²,Ho Johnny C.²³⁴⁵^ORCID

Affiliation:

1. Department of Electronic Engineering; City University of Hong Kong; 83 Tat Chee Avenue Kowloon Hong Kong SAR China

2. State Key Laboratory of Millimeter Waves; City University of Hong Kong; 83 Tat Chee Avenue Kowloon Hong Kong SAR China

3. Department of Materials Science and Engineering; City University of Hong Kong; 83 Tat Chee Avenue Kowloon Hong Kong SAR China

4. Centre of Functional Photonics; City University of Hong Kong; 83 Tat Chee Avenue Kowloon Hong Kong SAR China

5. Shenzhen Research Institute; City University of Hong Kong; Shenzhen 518057 China

6. Department of Chemistry; City University of Hong Kong; 83 Tat Chee Avenue Kowloon Hong Kong SAR China

Funder

General Research Fund of the Research Grants Council of Hong Kong SAR, China

National Natural Science Foundation of China

Science Technology and Innovation Committee of Shenzhen Municipality

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

Reference33 articles.

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