Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering-Reference-Cited by-同舟云学术

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Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering

Published:2017-04-04 Issue:12 Volume:4 Page:1700035
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Chai Jian Wei¹,Yang Ming²^ORCID,Callsen Martin³,Zhou Jun³,Yang Tong³,Zhang Zheng¹,Pan Ji Sheng¹,Chi Dong Zhi¹,Feng Yuan Ping³,Wang Shi Jie¹

Affiliation:

1. Institute of Materials Research and Engineering; A*-STAR; 2 Fusionopolis Way Singapore 138634 Singapore

2. Centre for Advanced 2D Materials and Graphene Research; National University of Singapore; 6 Science Drive 2 Singapore 117546 Singapore

3. Department of Physics; National University of Singapore; 2 Science Drive 3 Singapore 117542 Singapore

Funder

Singapore A*STAR 2D PHAROS project

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference59 articles.

1. Two-dimensional atomic crystals

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Single-Layer MoS2 Electronics

4. How Good Can Monolayer MoS2 Transistors Be?

5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

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1. Strong hybridization of Nb₂C with MoS₂: a way to reduce contact resistance;Journal of Physics D: Applied Physics;2024-05-16

2. Emerging Electronic Properties of Polymorphic2D‐TMDs;Two‐Dimensional Transition‐Metal Dichalcogenides;2023-11-10

3. Formation of Ohmic contacts between ferromagnetic Cr₂Ge₂Te₆ and two-dimensional metals;Journal of Physics: Condensed Matter;2023-07-06

4. Horizontal and vertical stacked Ag/MoS2 nanostructure enabled excellent carrier mobility and optoelectronic properties;Optics & Laser Technology;2022-11

5. Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes;Nanomaterials;2022-09-01

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