From FIB‐SIMS to SIMS‐FIB. The prospects for a 10 nm lateral resolution SIMS instrument with full FIB functionality-Reference-Cited by-同舟云学术

From FIB‐SIMS to SIMS‐FIB. The prospects for a 10 nm lateral resolution SIMS instrument with full FIB functionality

Published:2011-01 Issue:1-2 Volume:43 Page:479-483
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surface & Interface Analysis

Author:

McPhail David S.,Li Libing,Chater Richard J.,Yakovlev Nikolai,Seng Hweeleng

Abstract

AbstractThe FEI FIB (200) SIMS instrument is described herein, and its modes of operation outlined. The issues involved in achieving high lateral resolution analysis with good sensitivity are presented, and some examples of applications in materials science discussed. The possibility of a manufacturer developing a dedicated SIMS‐FIB instrument, i.e. a 10 nm lateral resolution SIMS instrument incorporating an FIB gun and FIB SIMS functionality (analysis, milling and channeling contrast) is explored. Copyright © 2010 John Wiley & Sons, Ltd.

Publisher

Wiley

Reference7 articles.

1. L.Li D. S.McPhail N.Yakovlev H.Seng Strategies for Improving the Sensitivity of Focused Ion Beam Secondary Ion Mass Spectrometry (FIB‐SIMS) ibid.

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