Dislocations in 4 H ‐ SiC Substrates and Epilayers
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch7
Reference46 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals;Defect and Diffusion Forum;2024-08-22
2. Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC;Defect and Diffusion Forum;2023-05-31
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