Device Processing Chain and Processing SiC in a Foundry Environment-Reference-Cited by-同舟云学术

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Device Processing Chain and Processing SiC in a Foundry Environment

Published:2021-10-29 Issue: Volume: Page:271-317
ISSN:
Container-title:Wide Bandgap Semiconductors for Power Electronics
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Author:

Salemi Arash,Kang Minseok,Sung Woongje,Agarwal Anant K.

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch11

Reference166 articles.

1. Fundamentals of Power Semiconductor Devices

2. The 1.2‐kV 4H‐SiC OCTFET: a new cell topology with improved high‐frequency figures‐of‐merit;Han K.;IEEE Electron Device Lett.,2019

3. A wafer‐scale Ni‐salicide contact technology on n‐type 4H‐SiC;Elahipanah H.;ECS J. Solid State Sci. Technol.,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H³TRB Testing;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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