Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy-Reference-Cited by-同舟云学术

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Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy

Published:2015-02-04 Issue:5 Volume:252 Page:1149-1154
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Arauchi Takuji¹,Takeuchi Shotaro¹,Hashimoto Yasuhiro²,Nakamura Yoshiaki¹,Yamane Keisuke²,Okada Narihito²,Imai Yasuhiko³,Kimura Shigeru³,Tadatomo Kazuyuki²,Sakai Akira¹

Affiliation:

1. Graduate School of Engineering Science; Osaka University; 1-3 Machikaneyama-cho Toyonaka Osaka 560-8531 Japan

2. Graduate School of Science and Engineering; Yamaguchi University; 2-16-1 Tokiwadai Ube Yamaguchi 755-8611 Japan

3. Japan Synchrotron Radiation Research Institute; 1-1-1 Kouto, Sayo-cho Sayo-gun Hyogo 679-5198 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451564/fullpdf

Reference18 articles.

1. Strain-induced polarization in wurtzite III-nitride semipolar layers

2. Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

4. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

5. High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Differences in Spatial Luminescence Characteristics between Blue and Green Quantum Wells in Monolithic Semipolar (20-21) LEDs Using SNOM;Nanomaterials;2022-09-27

2. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction;Journal of Applied Physics;2018-01-10

3. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique;Applied Physics Express;2016-10-11

4. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission;Semiconductor Science and Technology;2016-08-10

5. Positional dependence of defect distribution in semipolar $(20\bar{2}1)$ hydride vapor phase epitaxy-GaN films grown on $(22\bar{4}3)$ patterned sapphire substrates;Japanese Journal of Applied Physics;2016-04-12

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