Spin Filtering Magnetoresistance in Double‐Well Resonant Structures
Author:
Affiliation:
1. Institute for Solid State PhysicsUniversity of Tokyo5‐1‐5 Kashiwanoha, Kashiwa, 277‐8581 ChibaJapan
2. Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026Anhui ProvinceP.R. China
Funder
Grants-in-Aid for Scientific Research on Innovative Areas, “Nano Spin Conversion Science”
“Topological Materials Science”
JSPS KAKENHI
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800560
Reference19 articles.
1. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
4. Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
5. Spin-dependent electron transport in a nonmagnetic nanostructure with both Dresselhaus and Rashba spin-orbit terms
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