Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201147341/fullpdf
Reference25 articles.
1. Epitaxial growth and electric characteristics of cubic SiC on silicon
2. SiC/Si heteroepitaxial growth
3. Wafer curvature analysis in 3C-SiC layers grown on (001) and (111) Si substrates
4. Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
5. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
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2. Role of H2 and Ar as the diluent gas in continuous hot-wire CVD synthesis of SiC fiber;Journal of the European Ceramic Society;2022-07
3. Analysis of Stresses and Shape Changes in Thin Substrates with Stressed Film Patterning Using Femtosecond Laser Micromachining;SSRN Electronic Journal;2022
4. Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon;Micromachines;2021-09-03
5. Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations;CrystEngComm;2021
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