Long-range crystal-lattice distortion fields of epitaxial Ge-Sb-Te phase-change materials-Reference-Cited by-同舟云学术

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Long-range crystal-lattice distortion fields of epitaxial Ge-Sb-Te phase-change materials

Published:2013-12-16 Issue:4 Volume:251 Page:769-773
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Katmis Ferhat¹,Schmidbauer Martin²,Bokoch Sergiy M.³,Rodenbach Peter¹,Riechert Henning¹,Calarco Raffaella¹

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik; Hausvogteiplatz 5-7 10117 Berlin Germany

2. Leibniz-Institut für Kristallzüchtung; Max-Born-Str. 2 12489 Berlin Germany

3. Institute for Advanced Materials Science and Innovative Technologies; Sauletekio Ave. 15 Vilnius 10224 Lithuania

Funder

Deutsche Forschungsgemeinschaft

Japan Science and Technology Agency

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201350138/fullpdf

Reference42 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Understanding the phase-change mechanism of rewritable optical media

3. Towards a universal memory?

4. Low-cost and nanoscale non-volatile memory concept for future silicon chips

5. Phase-change materials for rewriteable data storage

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of crystalline phase change materials by physical deposition methods;Advances in Physics: X;2017-05-04

2. Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study;Journal of Applied Physics;2015-03-28

3. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy;Applied Physics Letters;2015-01-12

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