A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice-Reference-Cited by-同舟云学术

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Published:2016-10-07 Issue:4 Volume:254 Page:1600593
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Simoen Eddy¹²,Jayachandran Suseendran¹³,Delabie Annelies¹⁴,Caymax Matty¹,Heyns Marc¹³

Affiliation:

1. Imec; Kapeldreef 75 B-3001 Leuven Belgium

2. Department of Solid-State Sciences; Ghent University; Krijgslaan 281 S1 9000 Gent Belgium

3. Department of Metallurgy and Materials; KU Leuven; Castle Arenberg 44 B-3001 Leuven Belgium

4. Department of Chemistry; KU Leuven; Celestijnenlaan 200F B-3001 Leuven Belgium

Funder

European Commission

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600593/fullpdf

Reference25 articles.

1. Structure of MBE grown semiconductor–atomic superlattices

2. Transport through a nine period silicon/oxygen superlattice

3. R. J. Mears M. Hytha I. Dukovski A. Yiptong X. Huang S. Haliliv A. Broka R. J. Stephenson V. Rao D. R. Webb R. Prasad S. A. Kreps H. Takeuchi S. Ikeda G. Gebara K. Matthews J. T. Wetzel W. Xiong C. Bowen R. Wise C. R. Cleavelin

4. N. Xu N. Damrongplasit H. Takeuchi R. J. Stephenson N. W. Cody A. Yiptong X. Huang M. Mytha R. J. Mears T.-J. King Liu

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