Capacitance–Voltage Measurements of (Bi 1– x Sb x ) 2 Te 3 Field Effect Devices-Reference-Cited by-同舟云学术

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Capacitance–Voltage Measurements of (Bi 1– x Sb x ) 2 Te 3 Field Effect Devices

Published:2019-02-14 Issue:7 Volume:256 Page:1800624
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wang Jimin¹^ORCID,Schitko Markus¹,Mussler Gregor²³,Grützmacher Detlev²³,Weiss Dieter¹

Affiliation:

1. Institute for Experimental and Applied PhysicsUniversity of RegensburgD‐93040RegensburgGermany

2. Peter Grünberg Institute (PGI‐9) and JARA‐Fundamentals of Future Information TechnologyForschungszentrum Jülich GmbH52425JülichGermany

3. Helmholtz Virtual Institute for Topological Insulators (VITI)Forschungszentrum Jülich52425JülichGermany

Funder

Deutsche Forschungsgemeinschaft

American Friends of the Alexander von Humboldt Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800624

Reference29 articles.

1. Colloquium: Topological insulators

2. A tunable topological insulator in the spin helical Dirac transport regime

3. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

4. Topological Insulator Materials

5. Quantum Spin Hall Insulator State in HgTe Quantum Wells

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