Affiliation:
1. III‐V Lab A Joint Lab between Nokia Bell Labs Thales Research & Technology and CEA‐LETI 91767 Palaiseau France
2. IMS Laboratory UMR CNRS 5218 University of Bordeaux 33405 Talence France
Abstract
With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W−1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above.
Reference24 articles.
1. C.Hong B.Shi F.Qi P.Cai Y.Duan G.Hou T.Su T.Chiu S.Li W.Chen D.Pan in2022 Optical Fibre Communications Conf. and Exhibition (OFC) San Diego CA USA2022 pp.1–3.
2. International Telecommunication Union ITU‐G.9804.1: Higher Speed Passive Optical Networks ‐ Requirements https://www.itu.int/rec/T‐REC‐G.9804.1‐201911‐I/en(accessed: November 2019).
3. International Telecommunication Union ITU‐ G.9804.3: 50‐Gigabit‐capable passive optical networks (50G‐PON): Physical media dependent (PMD) layer specification https://www.itu.int/rec/T‐REC‐G.9804.3‐202109‐I/en(accessed: September 2021).
4. A 50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems
5. M.Nada Y.Muramoto H.Yokoyama T.Ishibashi H.Matsuzaki in26th Int. Conf. on Indium Phosphide and Related Materials (IPRM) Montpellier France2014 pp.1–2.