Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Author:

Strenaer Raphaël1,Guhel Yannick1ORCID,Gaquière Christophe2,Boudart Bertrand1

Affiliation:

1. Groupe de Recherche en Informatique Image et Instrumentation de Caen, Normandie Université, UNICAEN, ENSICAEN, CNRS, GREYC 14000 Caen France

2. Institut d’Electronique, de Microélectronique et de Nanotechnologie Cité scientifique, CS 60069 59652 Villeneuve d’Ascq France

Abstract

The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using infrared illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV is detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

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