Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Reference33 articles.
1. EFFECT OF DISLOCATIONS ON THE LOCAL ELECTRICAL PROPERTIES OF N-SI
2. Recombination activity of individual extended defects in silicon;Cavallini;MRS Proc,1992
3. On the theory of SEM charge-collection of localized defects in semiconductors;Donolato;Optik,1978
4. A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity;Donolato;Semicond Sci Technol,1992
5. Numerical analysis of the temperature dependence of EBIC and CL contrasts;Eckstein;J de Physique IV,1991
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