Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene-Reference-Cited by-同舟云学术

Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene

Published:2019-05-03 Issue:6 Volume:5 Page:1900109
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Liu Shiyi¹,DeWeerd Nicholas J.²,Reeves Brian J.²,San Long K.²,Dahal Drona¹,Radha Krishnan Raj Kishen¹,Strauss Steven H.²,Boltalina Olga V.²,Lüssem Björn¹^ORCID

Affiliation:

1. Department of Physics Kent State University Kent OH 44240 USA

2. Department of Chemistry Colorado State University Fort Collins CO 80523 USA

Funder

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900109

Reference53 articles.

1. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

2. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

3. Mobility overestimation due to gated contacts in organic field-effect transistors

4. Direct-written polymer field-effect transistors operating at 20 MHz

5. High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20MHz

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