Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width
Author:
Affiliation:
1. Department of Electrical and Computer Engineering University of California Davis CA 95616 USA
2. Department of Electrical and Computer Engineering University of California Santa Barbara CA 93106 USA
Funder
U.S. Department of Energy
Advanced Manufacturing Office
Office of Naval Research
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800689
Reference48 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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