Fully Solution-Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide-Reference-Cited by-同舟云学术

Fully Solution-Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide

Published:2017-06-29 Issue:8 Volume:3 Page:1700135
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shi Rui¹,Wang Xiangjing¹,Wang Zhan¹,Cao Lijun¹,Song Mengya¹,Huang Xiao¹,Liu Juqing¹,Huang Wei¹²

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM); Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM); Nanjing Tech University (NanjingTech); 30 South Puzhu Road Nanjing 211816 China

2. Key Laboratory for Organic Electronics & Information Displays (KLOEID); Institute of Advanced Materials (IAM); Nanjing University of Posts and Telecommunications; Nanjing 210046 China

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

Jiangsu Specially-Appointed Professor program

Six Talent Plan

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

2. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices