Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives-Reference-Cited by-同舟云学术

Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives

Published:2019-11-29 Issue:3 Volume:6 Page:1900789
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Salazar‐Rios Jorge Mario¹,Sengrian Aprizal Akbar¹,Talsma Wytse¹,Duim Herman¹,Abdu‐Aguye Mustapha¹,Jung Stefan²,Fröhlich Nils²,Allard Sybille²,Scherf Ullrich²,Loi Maria Antonietta¹^ORCID

Affiliation:

1. University of GroningenZernike Institute for Advanced Materials Nijenborgh 4 9747 AG Groningen The Netherlands

2. Bergische Universität WuppertalMakromolekulare Chemie und Institut für Polymertechnologie Gaußstraße 20 42119 Wuppertal Germany

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900789

Reference50 articles.

1. The road to carbon nanotube transistors

2. Ballistic carbon nanotube field-effect transistors

3. Single- and multi-wall carbon nanotube field-effect transistors

4. Room-temperature transistor based on a single carbon nanotube

5. Review of Electronics Based on Single-Walled Carbon Nanotubes

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors;Nanomaterials;2024-09-11

2. Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors;Journal of Applied Physics;2024-07-22

3. Electron transfer driving force as the criterion for efficient n-doping of organic semiconductors with DMBI-H derivatives;Journal of Materials Chemistry A;2023

4. High-performance carbon nanotube field-effect transistors with electron mobility of 39.4 cm2V−1s−1 using anion–π interaction doping;Carbon;2023-01

5. Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors;Materials;2022-11-29