Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements-Reference-Cited by-同舟云学术

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Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Published:2020-03-13 Issue:5 Volume:6 Page:1901153
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kurnia Fran¹²^ORCID,Liu Chunli³,Raveendra Nallagatla³,Jung Chang Uk³,Vasudevan Rama K.⁴^ORCID,Valanoor Nagarajan¹

Affiliation:

1. School of Materials Science and Engineering University of New South Wales Sydney New South Wales 2052 Australia

2. Centre for Nanostructured Media School of Mathematics and Physics Queens University Belfast University Road Belfast BT7 1NN UK

3. Department of Physics and Oxide Research Center Hankuk University of Foreign Studies Yongin 17035 Korea

4. Center for Nanophase and Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

Funder

Ministry of Science, ICT and Future Planning

Basic Energy Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201901153

Reference50 articles.

1. Memristor-The missing circuit element

2. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

3. Robust Pattern Transfer of Nanoimprinted Features for Sub-5-nm Fabrication

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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1. Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications;The Journal of Chemical Physics;2024-04-15

2. Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al₂O₃/MgO memristors;Nano Express;2024-04-01

3. Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method;Physica Scripta;2024-03-01

4. Synaptic mechanisms of four W/WO _x /ITO memristors with different WO _x structures;Journal of Physics D: Applied Physics;2022-08-23

5. Electroresistance effect in oxygen-deficient La0.8Ba0.2MnO3−δ thin films;Journal of Physics: Condensed Matter;2020-07-28

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