Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials-Reference-Cited by-同舟云学术

Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

Author:

Ren Wuyang¹²^ORCID,Zhu Hangtian²^ORCID,Mao Jun²^ORCID,You Li²³,Song Shaowei²,Tong Tian⁴,Bao Jiming⁴^ORCID,Luo Jun³,Wang Zhiming¹,Ren Zhifeng²^ORCID

Affiliation:

1. Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054 China

2. Department of Physics and Texas Center for Superconductivity University of Houston Houston TX 77204 USA

3. School of Materials Science and Engineering Shanghai University Shanghai 200444 China

4. Department of Electrical and Computer Engineering University of Houston Houston TX 77204 USA

Funder

U.S. Department of Energy

National Natural Science Foundation of China

University of Electronic Science and Technology of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference73 articles.

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