Polaronic Resistive Switching in Ceria‐Based Memory Devices-Reference-Cited by-同舟云学术

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Polaronic Resistive Switching in Ceria‐Based Memory Devices

Published:2019-07-22 Issue:10 Volume:5 Page:1900271
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Sun Lu¹,Hao Xiamin²,Meng Qingling²,Wang Ligen¹,Liu Feng³⁴,Zhou Miao²^ORCID

Affiliation:

1. Materials Computation Center General Research Institute for Nonferrous Metals Beijing 100088 China

2. School of Physics Beihang University Beijing 100191 China

3. Department of Materials Science and Engineering University of Utah Salt Lake City UT 84112 USA

4. Collaborative Innovation Center of Quantum Matter Beijing 100084 China

Funder

Science Challenge Project

National Natural Science Foundation of China

Basic Energy Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900271

Reference49 articles.

1. Memristor-The missing circuit element

2. Current switching of resistive states in magnetoresistive manganites

3. Reproducible switching effect in thin oxide films for memory applications

4. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

5. The missing memristor found

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