A Pure 2H‐MoS 2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator-Reference-Cited by-同舟云学术

A Pure 2H‐MoS 2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator

Published:2020-01-22 Issue:3 Volume:6 Page:1901342
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wang Kaiyang¹,Li Liteng¹,Zhao Rujie²,Zhao Jianhui¹,Zhou Zhenyu¹,Wang Jingjuan¹,Wang Hong¹,Tang Baokun¹,Lu Chao²,Lou Jianzhong¹,Chen Jingsheng³,Yan Xiaobing¹³⁴^ORCID

Affiliation:

1. National‐Local Joint Engineering Laboratory of New Energy Photovoltaic DevicesResearch Center of Machine Vision Engineering of Hebei UniversityCollege of Electron and Information EngineeringCollege of Pharmaceutical ScienceKey Laboratory of Pharmaceutical Quality Control of Hebei ProvinceHebei University Baoding 071002 P. R. China

2. Department of Electrical and Computer EngineeringSouthern Illinois University Carbondale Carbondale 62901 IL USA

3. Department of Materials Science and EngineeringNational University of Singapore Singapore 117576 Singapore

4. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Beijing 100029 P. R. China

Funder

National Natural Science Foundation of China

Foundation for Distinguished Young Talents in Higher Education of Guangdong

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201901342

Reference65 articles.

1. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

2. The Principles of Large-Scale Computing Machines