2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes
Author:
Affiliation:
1. i3N/CENIMATDepartment of Materials ScienceFaculty of Science and TechnologyUniversidade NOVA de Lisboa and CEMOP/UNINOVA Campus de Caparica 2829‐516 Caparica Portugal
Funder
H2020 Environment
Fundação para a Ciência e a Tecnologia
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900958
Reference41 articles.
1. Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate
2. Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
3. Toward High-Performance Amorphous GIZO TFTs
4. Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions
5. A review of emerging non-volatile memory (NVM) technologies and applications
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