Charge Carrier Induced Structural Ordering And Disordering in Organic Mixed Ionic Electronic Conductors

Author:

Quill Tyler J.1ORCID,LeCroy Garrett1ORCID,Marks Adam1,Hesse Sarah A.2,Thiburce Quentin1,McCulloch Iain3,Tassone Christopher J.2,Takacs Christopher J.2,Giovannitti Alexander14,Salleo Alberto1ORCID

Affiliation:

1. Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA

2. Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo Park CA 94025 USA

3. Department of Chemistry University of Oxford Oxford OX1 3TA UK

4. Department of Chemistry and Chemical Engineering Chalmers University of Technology Göteborg SE‐412 96 Sweden

Abstract

AbstractOperational stability underpins the successful application of organic mixed ionic‐electronic conductors (OMIECs) in a wide range of fields, including biosensing, neuromorphic computing, and wearable electronics. In this work, both the operation and stability of a p‐type OMIEC material of various molecular weights are investigated. Electrochemical transistor measurements reveal that device operation is very stable for at least 300 charging/discharging cycles independent of molecular weight, provided the charge density is kept below the threshold where strong charge–charge interactions become likely. When electrochemically charged to higher charge densities, an increase in device hysteresis and a decrease in conductivity due to a drop in the hole mobility arising from long‐range microstructural disruptions are observed. By employing operando X‐ray scattering techniques, two regimes of polaron‐induced structural changes are found: 1) polaron‐induced structural ordering at low carrier densities, and 2) irreversible structural disordering that disrupts charge transport at high carrier densities, where charge–charge interactions are significant. These operando measurements also reveal that the transfer curve hysteresis at high carrier densities is accompanied by an analogous structural hysteresis, providing a microstructural basis for such instabilities. This work provides a mechanistic understanding of the structural dynamics and material instabilities of OMIEC materials during device operation.

Funder

U.S. Department of Energy

Office of Science

Oak Ridge Institute for Science and Education

National Science Foundation

SLAC National Accelerator Laboratory

King Abdullah University of Science and Technology

Office of Research and Sponsored Programs, Marquette University

Engineering and Physical Sciences Research Council

Stanford University

Horizon 2020

Semiconductor Research Corporation

Basic Energy Sciences

Workforce Development for Teachers and Scientists

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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