Interface Design beyond Epitaxy: Oxide Heterostructures Comprising Symmetry‐Forbidden Interfaces

Abstract

AbstractEpitaxial growth of thin‐film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between 3D materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. This article presents a novel category of interfaces, the fabrication of which is membrane‐based and does not require epitaxial growth. These interfaces therefore overcome the limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, atomically clean interfaces are demonstrated between threefold symmetric sapphire and fourfold symmetric SrTiO3. Atomic‐resolution imaging reveals structurally well‐defined interfaces with a novel moiré‐type reconstruction.