Robust Ferrimagnetism and Ferroelectricity in 2D ɛ‐Fe2O3 Semiconductor with Ultrahigh Ordering Temperature

Abstract

Abstract2D single‐phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high‐density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ‐Fe2O3 samples with both single‐crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the ɛ‐Fe2O3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800 K, which reaches record highs in 2D single‐phase multiferroic materials. This work provides important progress in the exploration of 2D high‐temperature single‐phase multiferroics for potentially compact high‐temperature information nanodevices.