Precisely Aligned Monolayer MoS2Epitaxially Grown on h-BN basal Plane-Reference-Cited by-同舟云学术

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Precisely Aligned Monolayer MoS2Epitaxially Grown on h-BN basal Plane

Published:2016-12-07 Issue:7 Volume:13 Page:1603005
ISSN:1613-6810
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language:en
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Author:

Yu Hua¹²,Yang Zhengzhong¹²,Du Luojun¹³,Zhang Jing¹²,Shi Jinan¹²,Chen Wei⁴,Chen Peng¹²,Liao Mengzhou¹²,Zhao Jing¹²,Meng Jianling¹²,Wang Guole¹²,Zhu Jianqi¹²,Yang Rong¹²⁵,Shi Dongxia¹²⁵,Gu Lin¹⁶,Zhang Guangyu¹²⁵⁶

Affiliation:

1. Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

2. School of Physical Sciences; University of Chinese Academy of Sciences; Beijing 100190 China

3. Department of Physics; Renmin University of China; Beijing 100872 China

4. College of Physics and Electronic Information; Gannan Normal University; Jiangxi 341000 China

5. Beijing Key Laboratory for Nanomaterials and Nanodevices; Beijing 100190 China

6. Collaborative Innovation Center of Quantum Matter; Beijing 100190 China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference42 articles.

1. Ultrasensitive photodetectors based on monolayer MoS2

2. Single-layer MoS2 transistors

3. Single-layer MoS2 nanopores as nanopower generators

4. A subthermionic tunnel field-effect transistor with an atomically thin channel

5. Boron nitride substrates for high-quality graphene electronics

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1. Few-Layer MoS₂ on a SiO₂/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect;ACS Applied Nano Materials;2024-08-26

2. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides;Chemical Reviews;2024-08-12

3. Batch production of centimeter-scale monolayer MoS2 with low nucleation by face-to-face metal precursor supply;Vacuum;2024-08

4. Molecular beam epitaxy and other large-scale methods for producing monolayer transition metal dichalcogenides;Journal of Physics: Condensed Matter;2024-06-27

5. Competing multiferroic phases in monolayer and few-layer NiI2;Physical Review B;2024-05-13

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