Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography-Reference-Cited by-同舟云学术

Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

Published:2015-05-08 Issue:12 Volume:23 Page:1742-1753
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Stoffers Andreas¹,Cojocaru-Mirédin Oana¹,Seifert Winfried²³,Zaefferer Stefan¹,Riepe Stephan⁴,Raabe Dierk¹

Affiliation:

1. Max-Planck-Institut für Eisenforschung GmbH; Max-Planck-Straβe 1 Düsseldorf 40237 Germany

2. Brandenburgische Technische Universität Cottbus, Joint Lab IHP/BTU; Platz der Deutschen Einheit 1 Cottbus 03046 Germany

3. IHP; Im Technologiepark 25 Frankfurt (Oder) 15236 Germany

4. Fraunhofer-Institut für Solare Energiesysteme; Heidenhofstraße 2 Freiburg 79110 Germany

Funder

Federal Ministry of Education and Research

Federal Ministry for the Environment

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2614/fullpdf

Reference54 articles.

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2. Proceedings of 6th world conference on photovoltaic energy conversion 2014

3. Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior;Kveder;Physical Review B,2001

4. Development of high-performance multicrystalline silicon for photovoltaic industry;Yang;Progress in Photovoltaics: Research and Applications,2015

5. Grain Boundary Segregation in Metals

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