Recent Developments in p-Type Oxide Semiconductor Materials and Devices-Reference-Cited by-同舟云学术

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Recent Developments in p-Type Oxide Semiconductor Materials and Devices

Published:2016-02-16 Issue:20 Volume:28 Page:3831-3892
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wang Zhenwei¹,Nayak Pradipta K.¹,Caraveo-Frescas Jesus A.¹,Alshareef Husam N.¹

Affiliation:

1. Materials Science & Engineering; King Abdullah University of Science & Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference400 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. ZnO-based transparent thin-film transistors

4. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

5. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

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