Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening-Reference-Cited by-同舟云学术

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening

Published:2015-11-25 Issue:3 Volume:28 Page:547-552
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yu Zhihao¹,Ong Zhun-Yong²,Pan Yiming³,Cui Yang¹,Xin Run¹,Shi Yi¹,Wang Baigeng³,Wu Yun⁴,Chen Tangsheng⁴,Zhang Yong-Wei²,Zhang Gang²,Wang Xinran¹

Affiliation:

1. National Laboratory of Solid State Microstructures; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures; Nanjing University; Nanjing 210093 P. R. China

2. Institute of High Performance Computing; 1 Fusionopolis Way Singapore 138632 Singapore

3. National Laboratory of Solid State Microstructures; School of Physics; Nanjing University; Nanjing 210093 P. R. China

4. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory; Nanjing Electronic Device Institute; Nanjing 210016 P. R. China

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

MICM Laboratory Foundation

Priority Academic Program Development of Jiangsu Higher Education Institutions; “Jiangsu Shuangchuang” program

“Jiangsu Shuangchuang Team” Program

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201503033/fullpdf

Reference37 articles.

1. Layer Compounds

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Electronics based on two-dimensional materials

4. Single-Layer MoS2 Electronics

5. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

Cited by 239 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding electron transport mechanisms in monolayer MoS2 transistors: Impact of lattice phonon scattering and localized charge traps;Physical Review B;2024-09-09

2. Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion;Nanomaterials;2024-08-17

3. Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor;Journal of the American Chemical Society;2024-07-22

4. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts;Nature Communications;2024-05-30

5. Exploring the applications of Sc X I ( X = S , Se , Te ) monolayers for microelectronic nanodevices and photoelectric sensors;Physical Review Applied;2024-05-24