Doping: A Key Enabler for Organic Transistors-Reference-Cited by-同舟云学术

Doping: A Key Enabler for Organic Transistors

Published:2018-08-13 Issue:46 Volume:30 Page:1801830
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Xu Yong¹,Sun Huabin²,Liu Ao¹,Zhu Hui-Hui¹,Li Wenwu³,Lin Yen-Fu⁴,Noh Yong-Young¹^ORCID

Affiliation:

1. Department of Energy and Materials Engineering; Dongguk University; 26 Pil-dong, 3-ga, Jung-gu Seoul 100-715 Republic of Korea

2. School of Electronic and Optical Engineering; Nanjing University of Posts and Telecommunications; Nanjing Jiangsu 210023 China

3. Key Laboratory of Polar Materials and Devices (Ministry of Education); Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai); East China Normal University; Shanghai 200241 China

4. Department of Physics; National Chung Hsing University; Taichung 40227 Taiwan

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Center for Advanced Soft-Electronics

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201801830/fullpdf

Reference175 articles.

1. Approaching disorder-free transport in high-mobility conjugated polymers

2. 2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion

3. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts

4. Solution-based electrical doping of semiconducting polymer films over a limited depth

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