Highly Anisotropic Sb2Se3Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure-Reference-Cited by-同舟云学术

Highly Anisotropic Sb2Se3Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure

Published:2017-06-07 Issue:29 Volume:29 Page:1700441
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Song Huaibing¹,Li Tiaoyang²,Zhang Jia³,Zhou Ying¹,Luo Jiajun¹,Chen Chao¹,Yang Bo¹,Ge Cong¹,Wu Yanqing²,Tang Jiang¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information; Huazhong University of Science and Technology (HUST); 1037 Luoyu Road Wuhan Hubei 430074 China

2. Wuhan National High Magnetic Field Center; Huazhong University of Science and Technology (HUST); Wuhan 430074 China

3. School of Material Sciences and Engineering; Huazhong University of Science and Technology (HUST); Wuhan 430074 China

Funder

Major State Basic Research Development Program of China

National Natural Science Foundation of China

Special Fund for Strategic New Development of Shenzhen, China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference33 articles.

1. Highly anisotropic and robust excitons in monolayer black phosphorus

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3. Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

4. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

5. Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

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