Controlled Growth and Thickness‐Dependent Conduction‐Type Transition of 2D Ferrimagnetic Cr 2 S 3 Semiconductors-Reference-Cited by-同舟云学术

Controlled Growth and Thickness‐Dependent Conduction‐Type Transition of 2D Ferrimagnetic Cr 2 S 3 Semiconductors

Published:2019-12-11 Issue:4 Volume:32 Page:1905896
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Cui Fangfang¹,Zhao Xiaoxu²,Xu Junjie¹,Tang Bin³,Shang Qiuyu¹,Shi Jianping¹,Huan Yahuan¹,Liao Jianhui³,Chen Qing³,Hou Yanglong¹,Zhang Qing¹,Pennycook Stephen J.²,Zhang Yanfeng¹^ORCID

Affiliation:

1. Department of Materials Science and EngineeringCollege of EngineeringPeking University Beijing 100871 P. R. China

2. Department of Materials Science and EngineeringNational University of Singapore (NUS) Singapore 117574 Singapore

3. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking University Beijing 100871 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201905896

Reference52 articles.

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4. Evidence for moiré excitons in van der Waals heterostructures

5. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

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