Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing-Reference-Cited by-同舟云学术

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

Published:2016-11-18 Issue:4 Volume:29 Page:1603858
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Baby Tessy Theres¹,Rommel Manuel¹,von Seggern Falk¹²,Friederich Pascal¹,Reitz Christian¹,Dehm Simone¹,Kübel Christian¹³,Wenzel Wolfgang¹,Hahn Horst¹²,Dasgupta Subho¹⁴

Affiliation:

1. Institute for Nanotechnology; Karlsruhe Institute of Technology (KIT); Hermann-von-Helmholtz Platz 1 76344 Eggenstein-Leopoldshafen Germany

2. KIT-TUD Joint Research Laboratory Nanomaterials; Technische Universität Darmstadt (TUD); Institute of Materials Science; Jovanka-Bontschits-Str. 2 64287 Darmstadt Germany

3. Karlsruhe Nano Micro Facility; Karlsruhe Institute of Technology (KIT); Hermann-von-Helmholtz Platz 1 76344 Eggenstein-Leopoldshafen Germany

4. Department of Materials Engineering; Indian Institute of Science; Bangalore 560012 India

Funder

Helmholtz-Gemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference34 articles.

1. Organic and polymer transistors for electronics

2. Integrated Optoelectronic Devices Based on Conjugated Polymers

3. High-Resolution Printing of 3D Structures Using an Electrohydrodynamic Inkjet with Multiple Functional Inks