Chemical Doping: Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics (Adv. Mater. 42/2019)-Reference-Cited by-同舟云学术

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Chemical Doping: Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics (Adv. Mater. 42/2019)

Published:2019-10 Issue:42 Volume:31 Page:1970301
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Ji Hyun Goo¹,Solís‐Fernández Pablo²,Yoshimura Daisuke³,Maruyama Mina⁴,Endo Takahiko⁵,Miyata Yasumitsu⁵,Okada Susumu⁴,Ago Hiroki¹²

Affiliation:

1. Interdisciplinary Graduate School of Engineering SciencesKyushu University Fukuoka 816–8580 Japan

2. Global Innovation Center (GIC)Kyushu University Fukuoka 816–8580 Japan

3. Kyushu Synchrotron Light Research Center Saga 841‐0005 Japan

4. Graduate School of Pure and Applied SciencesUniversity of Tsukuba Ibaraki 305–8571 Japan

5. Department of PhysicsTokyo Metropolitan University Tokyo 192–0397 Japan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201970301

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1. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks;Chemical Reviews;2024-04-19

2. Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe₂ Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric;IEEE Transactions on Electron Devices;2024-03

3. Fabrication of a wearable and foldable photodetector based on a WSe₂-MXene 2D–2D heterostructure using a scalable handprint technique;Nanoscale;2024

4. Reduced Defect Density in MOCVD-Grown MoS₂ by Manipulating the Precursor Phase;ACS Applied Materials & Interfaces;2023-09-27

5. Synthesis of Large-Area Single- to Few-Layered MoS₂ on an Ionic Liquid Surface;ACS Applied Materials & Interfaces;2023-03-06

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