Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate
-
Published:2023-06-07
Issue:
Volume:
Page:
-
ISSN:0894-3370
-
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
-
language:
-
Short-container-title:
您需要登录后可以查看相关数据！