Oxidation of dimers at the Si(100) surface studied by first-principles simulation of high-resolution EELS-Reference-Cited by-同舟云学术

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Oxidation of dimers at the Si(100) surface studied by first-principles simulation of high-resolution EELS

Published:2010-06-14 Issue:8 Volume:247 Page:1946-1950
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Caramella Lucia,Hogan Conor,Onida Giovanni,Del Sole Rodolfo

Funder

European Community's Seventh Framework Programme

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200983952/fullpdf

Reference34 articles.

1. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

2. Dimer buckling of the Si(001)2×1 surface below 10 K observed by low-temperature scanning tunneling microscopy

3. Phase Manipulation betweenc(4×2)andp(2×2)on the Si(100) Surface at 4.2 K

4. Theoretical study of the Si(100) surface reconstruction

5. Probe effect in scanning tunneling microscopy onSi(001)low-temperature phases

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of the oxidation pathway on Si(100) using high-resolution EELS;physica status solidi (b);2012-04-04

2. Ab initiostudy of the early stages of gas-phase water oxidation of the Si(100)(2×1):H surface;Physical Review B;2011-11-16

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