Nondestructive interface state measurement by pulse photoconductivity method
Author:
Affiliation:
1. Graduate School of Science and Technology Kumamoto University; 2-39-1 Kurokami Kumamoto 860-8555 Japan
2. GlobalWafers Japan Co., Ltd.; 6-861-5 Higashikou, Seirou-machi, Kitakanbara-gun Niigata 957-0197 Japan
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
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1. A quasi-static technique for MOS C-V and surface state measurements
2. A reliable approach to charge-pumping measurements in MOS transistors
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4. Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
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1. Noncontact evaluation for interface states by photocarrier counting;Japanese Journal of Applied Physics;2018-02-05
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