Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers-Reference-Cited by-同舟云学术

Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers

Published:2021-01-15 Issue:2 Volume:15 Page:2000549
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kim Jun Shik¹,Kang Sukin¹,Jang Younjin¹,Lee Yonghee¹,Kim Kwangmin²,Kim Whayoung¹,Lee Woongkyu³,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1, Gwanak-gu Seoul 08826 Republic of Korea

2. Graduate School of Engineering Practice Seoul National University Gwanak-ro 1, Gwanak-gu Seoul 08826 Republic of Korea

3. Department of Electrical Engineering Myongji University 116 Myongji-ro, Cheoin-gu, Yongin-si Gyeonggi-do 17058 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000549

Reference25 articles.

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2. Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

3. A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

4. 256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

5. A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory

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